STP11N65M2 Datasheet - STMicroelectronics

STP11N65M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

STP11N65M2 Features

* Order code VDS RDS(on) max. ID STD11N65M2 STP11N65M2 650 V 0.68 Ω 7A STU11N65M2

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected PTOT 85 W Package DPAK TO-220 IPAK Applications

STP11N65M2-STMicroelectronics.pdf