STP11NM60ND N-Channel Power MOSFET

STMicroelectronics

Description

STP11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a TO-220 package .
S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology.

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Datasheet Specifications

Part number: STP11NM60ND
Manufacturer: STMicroelectronics ↗
File Size: 619.08 KB
Datasheet: STP11NM60ND_STMicroelectronics.pdf
Description: N-Channel Power MOSFET

Features

* TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP11NM60ND 650 V 450 mΩ 10 A
* Fast-recovery body diode
* Low gate charge and input capacitance
* Low on-resistance RDS(on)
* 100% avalanche tested
* High dv/dt ruggedness

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STP11NM60ND N-Channel Power MOSFET STMicroelectronics

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