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STP3NC90Z

N-CHANNEL MOSFET

STP3NC90Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STP3NC90Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

STP3NC90Z Datasheet (281.30 KB)

Preview of STP3NC90Z PDF

Datasheet Details

Part number:

STP3NC90Z

Manufacturer:

STMicroelectronics ↗

File Size:

281.30 KB

Description:

N-channel mosfet.
www.DataSheet4U.com N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP3NC90Z/FP STB3NC90Z-1 s s STP3NC.

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STP3NC90Z N-CHANNEL MOSFET ST Microelectronics

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