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STP7N80Z

N-Channel MOSFET

STP7N80Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STP7N80Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

STP7N80Z Datasheet (323.60 KB)

Preview of STP7N80Z PDF

Datasheet Details

Part number:

STP7N80Z

Manufacturer:

STMicroelectronics ↗

File Size:

323.60 KB

Description:

N-channel mosfet.
www.DataSheet4U.com N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ III MOSFET TYPE STP7NC80Z/FP STB7NC80Z-1 s s STP7N.

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STP7N80Z N-Channel MOSFET ST Microelectronics

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