STP7N80Z - N-Channel MOSFET

ST Microelectronics

STP7N80Z Datasheet Preview — Preview of STP7N80Z PDF

Datasheet Details

Part number	STP7N80Z
Manufacturer	STMicroelectronics ↗
File Size	323.60 KB
Description	N-Channel MOSFET
Datasheet	STP7N80Z_STMicroelectronics.pdf

STP7N80Z Product details

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/11 DataShe.

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Published: Sep 14, 2006 |