STP8NA50 Datasheet - ST Microelectronics

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STP8NA50 General Description

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIG.

STP8NA50 Datasheet (205.77 KB)

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STP8NA50

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STMicroelectronics ↗

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205.77 KB

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N - channel enhancement mode fast power mos transistor.
STP8NA50 STP8NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8NA50FI s s s s s s s V DSS 500 V 500 V R DS( on) < 0.85.

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STP8NA50 General Description

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