Datasheet Details
Part number:
STP8NA50
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205.77 KB
Description:
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP8NA50 STP8NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8NA50FI s s s s s s s V DSS 500 V 500 V R DS( on) < 0.85 Ω < 0.85 Ω ID 8A 4.5 A TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INT
STP8NA50_STMicroelectronics.pdf
STP8NA50, N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIG
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