Datasheet Details
Part number:
STP8N120K5
Manufacturer:
File Size:
257.02 KB
Description:
N-channel Power MOSFET
Features
* Order code VDS RDS(on) max. STP8N120K5 1200 V 2.00 Ω
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate charge
* 100% avalanche tested
* Zener-protected ID 6A PTOT 130 W Applications
* Switching applic
STP8N120K5-STMicroelectronics.pdf
STP8N120K5, N-channel Power MOSFET
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product s
STP8N120K5 Distributor
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