STP8N120K5 Datasheet - STMicroelectronics

STP8N120K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product s.

STP8N120K5 Features

* Order code VDS RDS(on) max. STP8N120K5 1200 V 2.00 Ω

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected ID 6A PTOT 130 W Applications

* Switching applic

STP8N120K5-STMicroelectronics.pdf