STRH80P6FSY3 Datasheet - ST Microelectronics

STRH80P6FSY3 P-channel 60V - 0.021 Ohm - TO-254AA Rad-hard low gate charge STripFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application .

STRH80P6FSY3 Features

* www.DataSheet4U.com Type STRH80P6FSY3 VDSS 60V

* Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy i

STRH80P6FSY3_STMicroelectronics.pdf