STRH10N25ESY3 Datasheet (ST Microelectronics)

STRH10N25ESY3, Power MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

It is therefore suitable as power switch in mainly highefficiency DC-DC converters.

It is also intended for any application

STRH10N25ESY3 Features

* Type STRH10N25ESY3

* www.DataSheet4U.com VDSS 250V Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA