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STRH12P10

Rad-Hard P-channel Power MOSFET

STRH12P10 Features

* VDS ID 100 V 12 A

* Fast switching

* 100% avalanche tested

* Hermetic package

* 100 krad TID

* SEE radiation hardened RDS(on) typ. 265 mΩ Qg 40 nC Description The STRH12P10 is a P-channel Power MOSFET able to operate under severe environment conditions

STRH12P10 General Description

The STRH12P10 is a P-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/029 and ava.

STRH12P10 Datasheet (415.36 KB)

Preview of STRH12P10 PDF

Datasheet Details

Part number:

STRH12P10

Manufacturer:

STMicroelectronics ↗

File Size:

415.36 KB

Description:

Rad-hard p-channel power mosfet.
STRH12P10 Datasheet Rad-Hard 100 V, 12 A, P-channel Power MOSFET 3 12 TO-257 AA The case is not connected to any lead D(1) G(3) S(2) SCO6140p Pro.

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STRH12P10 Rad-Hard P-channel Power MOSFET STMicroelectronics

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