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STRH8N10

6A N-channel Power MOSFET

STRH8N10 Features

* VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC

* Fast switching

* 100 % avalanche tested

* Hermetic package

* 50 krad TID

* SEE radiation hardened Description The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment condi

STRH8N10 General Description

The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/023 and ava.

STRH8N10 Datasheet (970.75 KB)

Preview of STRH8N10 PDF

Datasheet Details

Part number:

STRH8N10

Manufacturer:

STMicroelectronics ↗

File Size:

970.75 KB

Description:

6a n-channel power mosfet.

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STRH8N10 N-channel Power MOSFET STMicroelectronics

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