Datasheet4U.com

GD10PJX65L2SF - IGBT

STARPOWER

📥 Download Datasheet

GD10PJX65L2SF Datasheet Preview — Preview of GD10PJX65L2SF PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: GD10PJX65L2SF
Manufacturer: STARPOWER
File Size: 669.30 KB
Datasheet: GD10PJX65L2SF-STARPOWER.pdf
Description: IGBT

GD10PJX65L2SF Product details

Features

Low VCE(sat) Trench IGBT technology.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated heatsink using DBC technology.
PressFIT contact technology Typical.

📁 GD10PJX65L2SF Similar Datasheet

GD103SD - SWITCHING DIODE (GTM)
GD10HF60KD - short-circuit rugged IGBT (STMicroelectronics)
GD10MPS12A - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12E - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12H - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS17H - Silicon Carbide Schottky Diode (GeneSiC)
GD10NC60HD - very fast IGBT (STMicroelectronics)
GD10NC60KD - short-circuit rugged IGBT (STMicroelectronics)

Other Datasheets by STARPOWER

Published: Jul 13, 2025 |