GD30PJX65L2SF Datasheet - STARPOWER

GD30PJX65L2SF IGBT

GD30PJX65L2SF Features

* Low VCE(sat) Trench IGBT technology

* 6μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated heatsink using DBC technology

Datasheet Details

GD30PJX65L2SF

STARPOWER

665.35 KB

Igbt.

GD30PJX65L2SF Distributor

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GD30PJX65L2SF GD30PJX65L2SF IGBT STARPOWER