GD30PWX65F1S_B22 Datasheet - STARPOWER

GD30PWX65F1S_B22 IGBT

GD30PWX65F1S_B22 Features

* Low VCE(sat) Trench IGBT technology

* 6μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated heatsink using DBC technology

Datasheet Details

GD30PWX65F1S_B22

STARPOWER

551.22 KB

Igbt.

GD30PWX65F1S_B22 Distributor

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GD30PWX65F1S_B22 GD30PWX65F1S_B22 IGBT STARPOWER