GD75PIL120C6S Datasheet - STARPOWER

GD75PIL120C6S - IGBT

GD75PIL120C6S Features

* Low VCE(sat) SPT+ IGBT technology

* 10μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175℃

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper baseplate using DBC technology

Datasheet Details

GD75PIL120C6S

STARPOWER

562.20 KB

Igbt.

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