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2ST5949 NPN Transistor

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Description

2ST5949 High power NPN epitaxial planar bipolar transistor .
le The device is a NPN transistor manufactured o using new BiT-LA (Bipolar transistor for linear s amplifier) technology.

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Features

* High breakdown voltage VCEO = 250 V
* Complementary to 2ST2121
* Typical ft = 25 MHz t(s)

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STMicroelectronics 2ST5949-like datasheet