2STA1943
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High power pnp epitaxial planar bipolar transistor. This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting tra
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2STA1962 - High power PNP epitaxial planar bipolar transistor
(ST Microelectronics)
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2STA1962
High power PNP epitaxial planar bipolar transistor
Preliminary Data
Features
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High breakdown voltage VCEO > -23.
2STA1694 - High power PNP epitaxial planar bipolar transistor
(STMicroelectronics)
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2STA1694
High power PNP epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO = -120 V Complementar.
2STA1695 - High power PNP epitaxial planar bipolar transistor
(ST Microelectronics)
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2STA1695
High power PNP epitaxial planar bipolar transistor
General features
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Preliminary data
High breakdown voltage V.
2STA2120 - High power PNP epitaxial planar bipolar transistor
(STMicroelectronics)
..
2STA2120
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 2.
2STA2121 - High power PNP epitaxial planar bipolar transistor
(STMicroelectronics)
..
2STA2121
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 2.
2STA2510 - High power PNP epitaxial planar bipolar transistor
(STMicroelectronics)
..
2STA2510
High power PNP epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO = -100 V Complementar.
2ST1480 - (2ST1480 / 2ST2480) Complementary power transistors
(ST Microelectronics)
2ST1480 2ST2480
Complementary power transistors
Preliminary data
Features
■ ■ ■ ■
Very low collector-emitter saturation voltage High current gain ch.
2ST15300 - Rad-Hard NPN bipolar transistors
(STMicroelectronics)
2ST15300
Datasheet
Rad-Hard 300 V, 5 A NPN bipolar transistor
2 1
3
SMD.5
C (3)
(1) B
E (2)
DS10450
Features
VCBO
IC(max.)
300 V
5A
• 100 k.
2ST2121 - High power PNP epitaxial planar bipolar transistor
(STMicroelectronics)
..
2ST2121
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 25.
2ST2480 - (2ST1480 / 2ST2480) Complementary power transistors
(ST Microelectronics)
2ST1480 2ST2480
Complementary power transistors
Preliminary data
Features
■ ■ ■ ■
Very low collector-emitter saturation voltage High current gain ch.