2ST31A Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2ST31A

Manufacturer:

INCHANGE

File Size:

202.85kb

Download:

📄 Datasheet

Description:

Npn transistor. *Collector-Emitter sustaining Voltage : VCEO=60V(Min) *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device perform

TAGS

2ST31A

INCHANGE

📁 Related Datasheet

2ST31A - Low voltage NPN power transistor (STMicroelectronics)
2ST31A Low voltage NPN power transistor Features ■ High switching speed ■ Good performances in terms of hFE linearity Application ■ Linear and switch.

2ST3360K - NPN/PNP transistors (STMicroelectronics)
2ST3360K Datasheet Rad-Hard 60 V, 0.8 A, NPN and PNP transistors in single package 8 5 1 4 Flat-8 1 C1 2 B1 3 E1 C2 8 B2 7 E2 6 4 5 Flat-8 Pin .

2ST1480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
2ST1480 2ST2480 Complementary power transistors Preliminary data Features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain ch.

2ST15300 - Rad-Hard NPN bipolar transistors (STMicroelectronics)
2ST15300 Datasheet Rad-Hard 300 V, 5 A NPN bipolar transistor 2 1 3 SMD.5 C (3) (1) B E (2) DS10450 Features VCBO IC(max.) 300 V 5A • 100 k.

2ST2121 - High power PNP epitaxial planar bipolar transistor (STMicroelectronics)
.. 2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 25.

2ST2480 - (2ST1480 / 2ST2480) Complementary power transistors (ST Microelectronics)
2ST1480 2ST2480 Complementary power transistors Preliminary data Features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain ch.

2ST501T - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2ST501T DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·Min.

2ST5949 - NPN Transistor (STMicroelectronics)
2ST5949 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 250 V ■ Complementary to 2ST2121 ■ Typical ft .

2STA1694 - High power PNP epitaxial planar bipolar transistor (STMicroelectronics)
.. 2STA1694 High power PNP epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = -120 V Complementar.

2STA1695 - High power PNP epitaxial planar bipolar transistor (ST Microelectronics)
.. 2STA1695 High power PNP epitaxial planar bipolar transistor General features ■ ■ ■ ■ Preliminary data High breakdown voltage V.