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P75NS04Z

STP75NS04Z

P75NS04Z Features

* Type STP75NS04Z VDSS Clamped RDS(on) < 11mΩ ID 80A

* Low capacitance and gate charge

* 100% avalanche tested

* 175°C maximum junction temperature Description This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel

P75NS04Z General Description

This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of a new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditio.

P75NS04Z Datasheet (209.39 KB)

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P75NS04Z STP75NS04Z STMicroelectronics

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