Datasheet Details
- Part number
- PD20010-E
- Manufacturer
- STMicroelectronics ↗
- File Size
- 280.01 KB
- Datasheet
- PD20010-E_STMicroelectronics.pdf
- Description
- RF Power Transistor
PD20010-E Description
PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.datasheet4u.com .
The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
PD20010-E Applications
* It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20010-E’s superior linearity performance makes it an idea
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