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PD55035-E RF POWER transistor

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Description

PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

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Features

* Excellent thermal stability
* Common source configuration
* POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V

Applications

* It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. Device’s superior linearity performance makes it an ideal sol

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PD55035-E POWER transistor STMicroelectronics
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