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PD55035STR1-E

RF power LDMOS transistor

PD55035STR1-E Features

* Order code Frequency VDD PD55035STR1-E 500 MHz 12.5 V

* Excellent thermal stability

* Common source configuration

* POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V

* New RF plastic package POUT 35 W Gain 16.9 dB Efficiency 62% Description The device is a common

PD55035STR1-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit.

PD55035STR1-E Datasheet (326.27 KB)

Preview of PD55035STR1-E PDF

Datasheet Details

Part number:

PD55035STR1-E

Manufacturer:

STMicroelectronics ↗

File Size:

326.27 KB

Description:

Rf power ldmos transistor.
PD55035STR1-E Datasheet 35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pin connection Pin Connection 1.

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PD55035STR1-E power LDMOS transistor STMicroelectronics

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