PD55035STR1-E RF power LDMOS transistor

STMicroelectronics

Description

PD55035STR1-E Datasheet 35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pin connection Pin Connection 1.
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

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Datasheet Specifications

Part number: PD55035STR1-E
Manufacturer: STMicroelectronics ↗
File Size: 326.27 KB
Datasheet: PD55035STR1-E-STMicroelectronics.pdf
Description: RF power LDMOS transistor

Features

* Order code Frequency VDD PD55035STR1-E 500 MHz 12.5 V
* Excellent thermal stability
* Common source configuration
* POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V

Applications

* It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal so

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PD55035STR1-E power LDMOS transistor STMicroelectronics

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