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PD55035S-E, PD55035-E RF POWER transistor

PD55035S-E Description

PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs .
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

PD55035S-E Features

* Excellent thermal stability
* Common source configuration
* POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V

PD55035S-E Applications

* It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. Device’s superior linearity performance makes it an ideal sol

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This datasheet PDF includes multiple part numbers: PD55035S-E, PD55035-E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PD55035S-E, PD55035-E
Manufacturer
STMicroelectronics ↗
File Size
452.16 KB
Datasheet
PD55035-E-STMicroelectronics.pdf
Description
RF POWER transistor
Note
This datasheet PDF includes multiple part numbers: PD55035S-E, PD55035-E.
Please refer to the document for exact specifications by model.

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POWER transistor STMicroelectronics
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