PD55035S-E

RF POWER transistor

STMicroelectronics

PD55035S-E Features

* Excellent thermal stability

* Common source configuration

* POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V

* New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad b

PD55035S-E General Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearit.

PD55035S-E Datasheet (452.16 KB)