Datasheet Details
- Part number
- SCT055W65G3-4AG
- Manufacturer
- STMicroelectronics ↗
- File Size
- 503.82 KB
- Datasheet
- SCT055W65G3-4AG-STMicroelectronics.pdf
- Description
- Automotive-grade silicon carbide Power MOSFET
SCT055W65G3-4AG Description
SCT055W65G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT055W65G3-4AG Features
* Order code SCT055W65G3-4AG
VDS 650 V
RDS(on) typ. 58 mΩ
ID 30 A
HiP247-4
2 34 1
Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
SCT055W65G3-4AG Applications
* Power source(2)
ND1TPS2DS3G4
* DC/DC converter for EV/HEV
* Main inverter (electric traction)
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