SCT055W65G3-4AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCT055W65G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT055W65G3-4AG
Manufacturer: STMicroelectronics ↗
File Size: 503.82 KB
Datasheet: SCT055W65G3-4AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT055W65G3-4AG VDS 650 V RDS(on) typ. 58 mΩ ID 30 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode

Applications

* Power source(2) ND1TPS2DS3G4
* DC/DC converter for EV/HEV
* Main inverter (electric traction)

SCT055W65G3-4AG Distributors

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SCT055W65G3-4AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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