SCT070HU120G3AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCT070HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HU3PAK package TAB Gate (1) Driver source (2) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT070HU120G3AG
Manufacturer: STMicroelectronics ↗
File Size: 635.13 KB
Datasheet: SCT070HU120G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT070HU120G3AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased ef

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCT070HU120G3AG Distributors

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SCT070HU120G3AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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