SCT070W120G3-4AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCT070W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCT070W120G3-4AG
Manufacturer: STMicroelectronics ↗
File Size: 216.24 KB
Datasheet: SCT070W120G3-4AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCT070W120G3-4AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capabil

Applications

* Power source(2) ND1TPS2DS3G4
* Main inverter (electric traction)
* DC/DC converter for EV/HEV

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SCT070W120G3-4AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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