SCT070W120G3-4AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCT070W120G3-4AG
Manufacturer	STMicroelectronics ↗
File Size	216.24 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT070W120G3-4AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Order code SCT070W120G3-4AG VDS 1200 V RDS(on) typ. 63 mΩ ID 30 A HiP247-4 2 34 1 Drain(1, TAB).
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).
Source sensing pin for increased efficiency Gate(4) Driver source(3).

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Published: Jun 26, 2023 |