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STAP85050 RF power transistor

STAP85050 Description

PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.datasheet4u.com .
The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

STAP85050 Applications

* It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20010-E’s superior linearity performance makes it an idea

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