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STE26N50 Datasheet - STMicroelectronics

STE26N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STE26N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE26N50 s s V DSS 500 V R DS( on) < 0.2 Ω ID 26 A 4 3 s s s s s s s HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) I.

STE26N50_STMicroelectronics.pdf

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Datasheet Details

Part number:

STE26N50

Manufacturer:

STMicroelectronics ↗

File Size:

177.53 KB

Description:

N - channel enhancement mode power mos transistor.

STE26N50 Distributor

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STE26N50 STE26N50 CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics