STF13NM60N-H

N-channel MOSFET

STMicroelectronics

STF13NM60N-H Features

* Type STF13NM60N-H

* VDSS (@Tjmax) 650 V RDS(on) max < 0.36 Ω ID 11 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 Application

* TO-220FP Switching applications Description This series of devices implements second generation M

STF13NM60N-H General Description

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency .

STF13NM60N-H Datasheet (819.05 KB)