STGB19NC60K Datasheet - STMicroelectronics

20 A - 600 V - short circuit rugged IGBT

STGB19NC60K Features

* Low www.DataSheet4U.com

* Low

* on-voltage drop (VCE(sat)) Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with ultra fast free-wheeling diode 3 1 2 3 1 TO-220 D2PAK Applications

* High frequency inverter

STGB19NC60K General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Marking GB19NC60K GP19NC60K Package D2PAK TO-220 Packaging Tape and reel Tube Order codes ST.

STGB19NC60K Datasheet (562.51 KB)