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STGB10NB37LZ Datasheet - ST Microelectronics

STGB10NB37LZ IGBT

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. TAB 3 2 1 TO-220 TAB 3 1.

STGB10NB37LZ_STMicroelectronics.pdf

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STGB10NB37LZ STGB10NB37LZ IGBT ST Microelectronics

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