STGB10H60DF
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Igbt. E(3) NG1E3C2T These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices ar
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STGB10HF60KD - Short-circuit Rugged IGBT
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..
STGB10HF60KD, STGD10HF60KD STGF10HF60KD, STGP10HF60KD
10 A - 600 V - short-circuit rugged IGBT
Preliminary data
Features
■ ■ ■ ■.
STGB10M65DF2 - Trench gate field-stop IGBT
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Trench gate field-stop IGBT, M series 650 V, 10 A low loss
Datasheet - production data
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3 1 D2PAK
Figure 1: Internal schematic diag.
STGB10N60L - N-CHANNEL IGBT
(ST Microelectronics)
®
STGB10N60L
N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT
TYPE STGB10N60L
s
V CES 600 V
V CE(sat ) < 1.95 V
IC 10 A
s s
s s s
HIGH INPUT IMPEDA.
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■ Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High curre.
STGB10NB40LZ - N-CHANNEL IGBT
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STGB10NB40LZ
N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB10NB40LZ
s s s s s s
VCES CLAMPED
VCE(sat) < 1.8 V
IC 20 A
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STGB10NB40LZT4 - 410V internally clamped IGBT
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STGB10NB40LZT4
Automotive-grade 10 A, 410 V internally clamped IGBT
Datasheet - production data
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2 3
1
D²PAK
Figure 1: Internal schematic diagra.
STGB10NB60S - low drop IGBT
(ST Microelectronics)
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STGP10NB60S
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Table 1: General Features
TYP.
STGB10NC60HD - N-CHANNEL IGBT
(ST Microelectronics)
STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD
600 V - 10 A - very fast IGBT
Features
■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES rat.
STGB10NC60K - short-circuit rugged IGBT
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10 A, 600 V short-circuit rugged IGBT
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■ Low on voltage drop (VCESAT)
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t(s)Applications c■ .
STGB10NC60KD - 600V short-circuit rugged IGBT
(ST Microelectronics)
STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD
10 A, 600 V short-circuit rugged IGBT
Features
■ Lower on voltage drop (VCE(sat)) ■ Lower CRES .