STGB10HF60KD Datasheet - ST Microelectronics

STGB10HF60KD Short-circuit Rugged IGBT

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Marking GB10HF60KD GD10HF60KD GF10HF60KD GP10HF60KD Package D2PAK DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Tube Ord.

STGB10HF60KD Features

* Low on-voltage drop (VCE(sat)) Operating junction temperature up to 175 °C Low Cres / Cies ratio (no cross conduction susceptibility) Tight parameter distribution Ultrafast soft-recovery antiparallel diode Short-circuit rugged 3 1 3 1 2 1 3 2 TO-220FP TAB TAB

STGB10HF60KD_STMicroelectronics.pdf