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STGB10M65DF2

Trench gate field-stop IGBT

STGB10M65DF2 Features

* 6 µs of short-circuit withstand time

* VCE(sat) = 1.55 V (typ.) @ IC = 10 A

* Tight parameter distribution

* Safer paralleling

* Low thermal resistance

* Soft and very fast recovery antiparallel diode Applications

* Motor control

* UPS

* PFC Description This dev

STGB10M65DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential.

STGB10M65DF2 Datasheet (943.40 KB)

Preview of STGB10M65DF2 PDF

Datasheet Details

Part number:

STGB10M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

943.40 KB

Description:

Trench gate field-stop igbt.
STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diag.

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STGB10M65DF2 Trench gate field-stop IGBT STMicroelectronics

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