STGB10M65DF2 Datasheet, Igbt, STMicroelectronics

STGB10M65DF2 Features

• Igbt
• 6 µs of short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 10 A
• Tight parameter distribution
• Safer paralleling
• Low thermal re

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Part number:

STGB10M65DF2

Manufacturer:

STMicroelectronics ↗

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943.40kb

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📄 Datasheet

Description:

Trench gate field-stop igbt. This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series o

STGB10M65DF2 Application

• Applications
• Motor control
• UPS
• PFC Description This device is an IGBT developed using an advanced proprietary trench g

TAGS

STGB10M65DF2

STMicroelectronics

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