STGB10NB60S

low drop IGBT

ST Microelectronics

STGB10NB60S Features

* TYPE STGP10NB60S STGP10NB60SFP STGB10NB60S s Figure 1: Package IC @100°C 10 A 10 A 10 A 1 2 VCES 600 V 600 V 600 V VCE(sat) (Max) @25°C < 1.7 V < 1.7 V < 1.7 V 3 1 2 3 s s s HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP( Vcesat ) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TA

STGB10NB60S General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1.

STGB10NB60S Datasheet (578.05 KB)