STGB14NC60KD Datasheet - STMicroelectronics

STGB14NC60KD 600V short-circuit rugged IGBT

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. TAB 2 3 1 D²PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB14NC60KDT4 GB14.

STGB14NC60KD Features

* Short circuit withstand time 10µs.

* Low on-voltage drop (VCE(sat))

* Low Cres / Cies ratio (no cross conduction susceptibility)

* Switching losses include diode recovery energy

* Very soft ultra fast recovery antiparallel diode Applications

* High frequency inverters

STGB14NC60KD-STMicroelectronics.pdf