STGB14NC60KDT4 Datasheet - STMicroelectronics

STGB14NC60KDT4 600V short-circuit rugged IGBT

These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Product status links STGB14NC60KDT4 ST.

STGB14NC60KDT4 Features

* Low on voltage drop (VCE(sat))

* Low Cres / Cies ratio (no cross-conduction susceptibility)

* Very soft ultra-fast recovery antiparallel diode

* Short-circuit withstand time 10 μs Applications

* High frequency inverters

* SMPS and PFC in both

STGB14NC60KDT4-STMicroelectronics.pdf