STGB10NC60KD

600V short-circuit rugged IGBT

ST Microelectronics

STGB10NC60KD Features

* Lower on voltage drop (VCE(sat))

* Lower CRES / CIES ratio (no cross-conduction susceptibility)

* Very soft ultra fast recovery antiparallel diode

* Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off

STGB10NC60KD General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Applications
* High frequency motor controls
* SMPS and PFC in both hard switch and resonant topologies
* Motor drives TAB 3 1 D2PAK TAB 3 1 D.

STGB10NC60KD Datasheet (522.62 KB)