STGP30M65DF2

Trench gate field-stop IGBT

STMicroelectronics

STGP30M65DF2 Features

* 6 µs of short-circuit withstand time

* VCE(sat) = 1.55 V (typ.) @ IC = 30 A

* Tight parameters distribution

* Safer paralleling

* Low thermal resistance

* Soft and very fast recovery antiparallel diode Applications

* Motor control

* U

STGP30M65DF2 General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential..

STGP30M65DF2 Datasheet (524.32 KB)