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STGWA40S120DF3 Datasheet - STMicroelectronics

STGWA40S120DF3 Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight paramet.

STGWA40S120DF3 Features

* 10 µs of short-circuit withstand time

* VCE(sat) = 1.65 V (typ.) @ IC = 40 A

* Tight parameter distribution

* Safer paralleling

* Low thermal resistance

* Soft and fast recovery antiparallel diode Applications

* Industrial drives

* UP

STGWA40S120DF3 Datasheet (406.81 KB)