STGWA50HP65FB2 IGBT

STMicroelectronics

Description

STGWA50HP65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package G(1) C(2, TAB) .
E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: STGWA50HP65FB2
Manufacturer: STMicroelectronics ↗
File Size: 537.85 KB
Datasheet: STGWA50HP65FB2-STMicroelectronics.pdf
Description: IGBT

Features

* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.55 V(typ. ) @ IC = 50 A
* Co-packaged protection diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) temperature coefficient A

Applications

* Welding

STGWA50HP65FB2 Distributors

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STGWA50HP65FB2 IGBT STMicroelectronics

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