STGWA50HP65FB2 Datasheet (STMicroelectronics)

STGWA50HP65FB2, IGBT

E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure.

The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced

STGWA50HP65FB2 Features

* Maximum junction temperature : TJ = 175 °C

* Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A

* Co-packaged protection diode

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Positive VCE(sat) temperature coefficient A