STGWA50IH65DF

Trench gate field-stop IGBT

STMicroelectronics

STGWA50IH65DF Features

* Designed for soft-commutation only

* Maximum junction temperature: TJ = 175 °C

* VCE(sat) = 1.5 V (typ.) @ IC = 50 A

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Low voltage drop freewheeling co-packaged diode Figure 1: Internal sc

STGWA50IH65DF General Description

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for softcommutation. A freewheeling diode with a low drop forward voltage is included. The result i.

STGWA50IH65DF Datasheet (666.30 KB)