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STGWA50M65DF2 - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGWA50M65DF2
Manufacturer	STMicroelectronics ↗
File Size	315.74 KB
Description	IGBT
Datasheet	STGWA50M65DF2-STMicroelectronics.pdf

STGWA50M65DF2 Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
6 μs of minimum short-circuit withstand time.
VCE(sat) = 1.65 V (typ. ) @ IC = 50 A.
Tight parameter distribution.
Safer paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft- and fast-recovery antiparallel diode.

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Published: Jan 7, 2017 |