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STGWA50M65DF2AG - Automotive-grade IGBT

STMicroelectronics

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Datasheet Details

Part number	STGWA50M65DF2AG
Manufacturer	STMicroelectronics ↗
File Size	657.55 KB
Description	Automotive-grade IGBT
Datasheet	STGWA50M65DF2AG-STMicroelectronics.pdf

STGWA50M65DF2AG Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

TO-247 long leads Product status link STGWA50M65DF2AG.
AEC-Q101 qualified.
Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.7 V (typ. ) @ IC = 50 A.
Minimized tail current.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast-recovery antiparallel diode.

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Published: Feb 17, 2024 |