STGWA50M65DF2AG

Automotive-grade IGBT

STMicroelectronics

STGWA50M65DF2AG Features

* TO-247 long leads Product status link STGWA50M65DF2AG

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A

* Minimized tail current

* Tight parameter distribution

* Safer paralleling

STGWA50M65DF2AG General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthe.

STGWA50M65DF2AG Datasheet (657.55 KB)