STGWA50M65DF2AG Datasheet (STMicroelectronics)

STGWA50M65DF2AG, Automotive-grade IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

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STGWA50M65DF2AG Features

* TO-247 long leads Product status link STGWA50M65DF2AG

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A

* Minimized tail current

* Tight parameter distribution

* Safer paralleling