STGWA80H65DFB 650V 80A IGBT

STMicroelectronics

Description

STGWA80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT TO-247 long leads Product status link STGWA80H65DFB .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STGWA80H65DFB
Manufacturer: STMicroelectronics ↗
File Size: 787.20 KB
Datasheet: STGWA80H65DFB-STMicroelectronics.pdf
Description: 650V 80A IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 80 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) temp

Applications

* Solar inverters (string and central)

STGWA80H65DFB Distributors

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STGWA80H65DFB 650V 80A IGBT STMicroelectronics

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