STGWA80H65DFB Datasheet - STMicroelectronics

STGWA80H65DFB 650V 80A IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slig.

STGWA80H65DFB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A

* Tight parameter distribution

* Safe paralleling

* Positive VCE(sat) temp

STGWA80H65DFB Datasheet (787.20 KB)