STGWA80H65FBAG Datasheet - STMicroelectronics

STGWA80H65FBAG IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the sligh.

STGWA80H65FBAG Features

* AEC-Q101 qualified

* Maximum junction temperature: TJ = 175 °C

* High-speed switching series

* Minimized tail current

* VCE(sat) = 1.65 V (typ.) @ IC = 80 A

* Tight parameters distribution

* Safer paralleling

* Low thermal resistance

STGWA80H65FBAG-STMicroelectronics.pdf