STGWA80H65DFBAG Datasheet - STMicroelectronics

STGWA80H65DFBAG IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the sligh.

STGWA80H65DFBAG Features

* TO-247 long leads C(2, TAB)

* AEC-Q101 qualified

* High-speed switching series

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A

* Minimized tail current

* Tight parameter distribution

* Positive temperatu

STGWA80H65DFBAG-STMicroelectronics.pdf