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STGWA80H65DFBAG - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGWA80H65DFBAG
Manufacturer	STMicroelectronics ↗
File Size	275.87 KB
Description	IGBT
Datasheet	STGWA80H65DFBAG-STMicroelectronics.pdf

STGWA80H65DFBAG Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

TO-247 long leads C(2, TAB).
AEC-Q101 qualified.
High-speed switching series.
Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.65 V (typ. ) @ IC = 80 A.
Minimized tail current.
Tight parameter distribution.
Positive temperature VCE(sat) coefficient.
Soft and very fast recovery antiparallel diode.

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Published: Mar 1, 2023 |