Description
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data .
G (1)
E (3)
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
Features
* TAB
3 2 1
TO-247 TO-247 long leads
3 2 1
TO-3P
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.6 V (typ. ) @ IC = 80 A
* Tight parameter distribution
* Safe paralleling
* Low
Applications
* Figure 1. Internal schematic diagram
C (2 or TAB)
* Photovoltaic inverters