STGWA80H65FB, STGW80H65FB Datasheet - STMicroelectronics

STGWA80H65FB IGBT

G (1) E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter..

STGWA80H65FB Features

* TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.6 V (typ.) @ IC = 80 A

* Tight parameter distribution

* Safe paralleling

* Low

STGW80H65FB-STMicroelectronics.pdf