STGWT80H65DFB, STGW80H65DFB IGBT

STMicroelectronics

STGWT80H65DFB Description

STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT 3 2 1 TO-247 TAB TO-3P 3 2 1 .
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

STGWT80H65DFB Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 80 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) temperature c

STGWT80H65DFB Applications

* Photovoltaic inverters

📥 Download Datasheet

STGWT80H65DFB Datasheet Preview — This datasheet PDF includes multiple part numbers: STGWT80H65DFB, STGW80H65DFB. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: STGWT80H65DFB, STGW80H65DFB
Manufacturer: STMicroelectronics ↗
File Size: 663.72 KB
Datasheet: STGW80H65DFB-STMicroelectronics.pdf
Description: IGBT
Note: This datasheet PDF includes multiple part numbers: STGWT80H65DFB, STGW80H65DFB.
Please refer to the document for exact specifications by model.

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IGBT STMicroelectronics

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