STGWT80H65DFB Datasheet, Igbt, STMicroelectronics

STGWT80H65DFB Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC

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Part number:

STGWT80H65DFB

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STMicroelectronics ↗

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663.72kb

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📄 Datasheet

Description:

Igbt. These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB

STGWT80H65DFB Application

• Applications
• Photovoltaic inverters
• High frequency converters Description These devices are IGBTs developed using an advanced p

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STGWT80H65DFB

STMicroelectronics

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