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STGWT80H65DFB, STGW80H65DFB - IGBT

STMicroelectronics

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STGWT80H65DFB Datasheet Preview — This datasheet PDF includes multiple part numbers: STGWT80H65DFB, STGW80H65DFB. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	STGWT80H65DFB, STGW80H65DFB
Manufacturer	STMicroelectronics
File Size	663.72 KB
Description	IGBT
Datasheet	STGW80H65DFB-STMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: STGWT80H65DFB, STGW80H65DFB. Please refer to the document for exact specifications by model.

STGWT80H65DFB Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 80 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Mar 25, 2020 |