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STGWT80H65DFB, STGW80H65DFB Datasheet - STMicroelectronics

STGWT80H65DFB IGBT

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the s.

STGWT80H65DFB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A

* Tight parameter distribution

* Safe paralleling

* Positive VCE(sat) temperature c

STGW80H65DFB-STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STGWT80H65DFB, STGW80H65DFB. Please refer to the document for exact specifications by model.
STGWT80H65DFB Datasheet Preview Page 2 STGWT80H65DFB Datasheet Preview Page 3

Datasheet Details

Part number:

STGWT80H65DFB, STGW80H65DFB

Manufacturer:

STMicroelectronics ↗

File Size:

663.72 KB

Description:

Igbt.

Note:

This datasheet PDF includes multiple part numbers: STGWT80H65DFB, STGW80H65DFB.
Please refer to the document for exact specifications by model.

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STGWT80H65DFB STGW80H65DFB IGBT STMicroelectronics

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