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STGWT80H65FB, STGW80H65FB IGBT

STGWT80H65FB Description

STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data .
G (1) E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

STGWT80H65FB Features

* TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.6 V (typ. ) @ IC = 80 A
* Tight parameter distribution
* Safe paralleling
* Low

STGWT80H65FB Applications

* Figure 1. Internal schematic diagram C (2 or TAB)
* Photovoltaic inverters

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: STGWT80H65FB, STGW80H65FB. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
STGWT80H65FB, STGW80H65FB
Manufacturer
STMicroelectronics ↗
File Size
1.44 MB
Datasheet
STGW80H65FB-STMicroelectronics.pdf
Description
IGBT
Note
This datasheet PDF includes multiple part numbers: STGWT80H65FB, STGW80H65FB.
Please refer to the document for exact specifications by model.

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