STI22NM60N Datasheet - STMicroelectronics

STI22NM60N N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STI22NM60N Features

* TAB ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STI22NM60N 650 V 0.22 Ω 16 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications

STI22NM60N-STMicroelectronics.pdf